S -Shaped Current-Voltage Characteristics of n+ - I - n - N+ Graphene Field-Effect Transistors due to the Coulomb Drag of Quasiequilibrium Electrons by Ballistic Electrons

V. Ryzhii, M. Ryzhii, V. Mitin, M. S. Shur, T. Otsuji

研究成果: Article査読

抄録

We demonstrate that the injection of the ballistic electrons into the two-dimensional electron plasma in lateral n+-i-n-n+ graphene field-effect transistors (GFETs) might lead to a substantial Coulomb drag of the quasiequilibrium electrons due the violation of the Galilean and Lorentz invariance in the systems with a linear electron dispersion. This effect can result in S-shaped current-voltage (I-V) characteristics. The resulting negative differential conductivity enables the hysteresis effects and current filamentation that can be used for the implementation of voltage-switching devices. Due to a strong nonlinearity of the I-V characteristics, the GFETs can be used for an effective frequency multiplication and detection of terahertz radiation.

本文言語English
論文番号014001
ジャーナルPhysical Review Applied
16
1
DOI
出版ステータスPublished - 2021 7

ASJC Scopus subject areas

  • 物理学および天文学(全般)

フィンガープリント

「S -Shaped Current-Voltage Characteristics of n+ - I - n - N+ Graphene Field-Effect Transistors due to the Coulomb Drag of Quasiequilibrium Electrons by Ballistic Electrons」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル