Ruggedness and reliability of the 2.5 kV-1.8 kA power pack IGBT with a novel multi-collector structure

Takeharu Koga, Kazuaki Yamazaki, Hiroki Wakimoto, Yoshikazu Takahashi, Humiaki Kirihata, Yasukazu Seki

研究成果: Paper査読

10 被引用数 (Scopus)

抄録

A 2.5 kV-1.8 kA advanced type Power Pack IGBT has been developed by use of our original multi-collector structure. From this multi-collector structure, we can drastically reduce the thermal stress occurring during the power cycling test. In addition to the mechanical ruggedness, the high turn-off capability of Ic = 6600 A, Vc(peak) = 2400 V, Tj = 125 °C and the wide SCSOA of Vcc = 1800 V, Ic = 10000 A, Tj = 125 °C, tw = 15 μs are realized. These high electrical ruggedness come from decreasing the imbalance operation among chips.

本文言語English
ページ437-440
ページ数4
出版ステータスPublished - 1998
外部発表はい
イベントProceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98 - Kyoto, Jpn
継続期間: 1998 6月 31998 6月 6

Other

OtherProceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98
CityKyoto, Jpn
Period98/6/398/6/6

ASJC Scopus subject areas

  • 電子工学および電気工学

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