A 2.5 kV-1.8 kA advanced type Power Pack IGBT has been developed by use of our original multi-collector structure. From this multi-collector structure, we can drastically reduce the thermal stress occurring during the power cycling test. In addition to the mechanical ruggedness, the high turn-off capability of Ic = 6600 A, Vc(peak) = 2400 V, Tj = 125 °C and the wide SCSOA of Vcc = 1800 V, Ic = 10000 A, Tj = 125 °C, tw = 15 μs are realized. These high electrical ruggedness come from decreasing the imbalance operation among chips.
|出版ステータス||Published - 1998|
|イベント||Proceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98 - Kyoto, Jpn|
継続期間: 1998 6月 3 → 1998 6月 6
|Other||Proceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98|
|Period||98/6/3 → 98/6/6|
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