Roughness reduction in polycrystalline silicon thin films formed by continuous-wave laser lateral crystallization with Cap SiO2 thin films

Shuntaro Fujii, Shin Ichiro Kuroki, Masayuki Numata, Koji Kotani, Takashi Ito

研究成果: Article査読

8 被引用数 (Scopus)

抄録

In continuous-wave (cw) laser lateral crystallization of amorphous silicon (a-Si) thin films, the effects of cap SiO2 thin films were investigated. The thickness of the cap SiO2 film was 10 nm, which is sufficiently thin to exclude anti reflection effect. The cap SiO2 thin films suppressed the generation of voids during the cw laser crystallization, and the available crystallization condition to form lateral-crystallized polycrystalline silicon (poly-Si) thin films was expanded. By using the cap SiO2 thin films, the surface of the lateral-crystallized poly-Si thin films became smooth, and an average roughness of 1.3nm was achieved.

本文言語English
論文番号04C129
ジャーナルJapanese journal of applied physics
48
4 PART 2
DOI
出版ステータスPublished - 2009 4 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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