Room temperature terahertz emission from plasmon-resonant high-electron mobility transistors stimulated by optical signals

Taiichi Otsuji, Yahya M. Meziani, Mitsuhiro Hanabe, Takuya Nishimura, Eiichi Sano

研究成果: Conference contribution

抄録

We have designed and fabricated our original terahertz plasmon-resonant emitter incorporating doubly interdigitated grating gates and a vertical cavity into an InGaP/InGaAs/GaAs high-electron mobility transistor (HEMT) structure. The fabricated device is subjected to 1550-nm, 1-mW (a) a single CW-laser, (b) 4-THz photomixed dual CW-laser, and (c) a 70-fs pulsed-laser illumination at room temperature. In case of (a), terahertz emission due to the plasmon modes of self oscillation is detected by a Si bolometer under certain bias conditions. In case of (b), a resonant peak of injection-locked 4-THz oscillation is clearly observed on the device photoresponse. In case of (c), an impulsive radiation followed by relaxation oscillation is observed by electrooptic sampling, whose Fourier spectrum exhibited resonant peaks of plasmons' harmonic modes up to 4 THz. Estimated radiation power exceeds 0.1 μW, resulting in excellent conversion efficiency of the order of 10-4.

本文言語English
ホスト出版物のタイトルTerahertz Physics, Devices, and Systems II
DOI
出版ステータスPublished - 2007 12 1
イベントTerahertz Physics, Devices, and Systems II - Boston, MA, United States
継続期間: 2007 9 112007 9 12

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
6772
ISSN(印刷版)0277-786X

Other

OtherTerahertz Physics, Devices, and Systems II
CountryUnited States
CityBoston, MA
Period07/9/1107/9/12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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