Room temperature terahertz detection in high-electron-mobility transistor structure using InAlAs/InGaAs/InP Material Systems

A. El Moutaouakil, T. Suemitsu, T. Otsuji, D. Coquillat, W. Knap

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

We report on non-resonant terahertz detection using the rectification mechanism of two-dimensional plasmons in InAlAs/InGaAs/InP high-electron- mobility transistors at 300K, demonstrating excellent sensitivity/noise performances of ∼125 V/W and ∼10-11 W/Hz0.5 for 0.30THz radiation.

本文言語English
ホスト出版物のタイトルIRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide
DOI
出版ステータスPublished - 2010 11 30
イベント35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010 - Rome, Italy
継続期間: 2010 9 52010 9 10

出版物シリーズ

名前IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

Other

Other35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010
CountryItaly
CityRome
Period10/9/510/9/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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