Room-temperature observation of size effects in photoluminescence of Si 0.8Ge 0.2/Si nanocolumns prepared by neutral beam etching

Rii Hirano, Satoru Miyamoto, Masahiro Yonemoto, Seiji Samukawa, Kentarou Sawano, Yasuhiro Shiraki, Kohei M. Itoh

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We report the room-temperature observation of clear size effects in photoluminescence of ensembles of SiGe/Si double-quantum-well nanocolumns. A silicon thin layer (~100 nm) containing two 3-nm-thick Si 0.8Ge 0.2 layers was etched into an ensemble of ~100nm tall nanocolumns standing vertically on the 200-nm-thick silicon-on-insulator layer. A clear shift of photoluminescence peak positions appearing at around 1.8 eV has been observed with varying average diameter of the nanocolumns between 18 and 24 nm.

本文言語English
論文番号082004
ジャーナルApplied Physics Express
5
8
DOI
出版ステータスPublished - 2012 8月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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