Room-temperature observation of a Coulomb blockade phenomenon in aluminum nanodots fabricated by an electrochemical process

Yasuo Kimura, Kazumasa Itoh, Ryo Taro Yamaguchi, Ken Ichi Ishibashi, Kingo Itaya, Michio Niwano

研究成果: Article査読

18 被引用数 (Scopus)

抄録

An aluminum nanodot was self-organized between two electrodes using the anodization process of an aluminum microelectrode of 3 μm in width. The authors observed a clear Coulomb staircase with a very large Coulomb energy of about 2 eV at room temperature. This very large Coulomb energy is attributed to the device structure which depends strongly on the aluminum nanodot formation mechanism. The authors' results indicate that a single electron transistor operating at room temperature can be fabricated at an appropriate position using both bottom-up and top-down processes.

本文言語English
論文番号093119
ジャーナルApplied Physics Letters
90
9
DOI
出版ステータスPublished - 2007
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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