Room-temperature near-band-edge photoluminescence from CuInSe2 heteroepitaxial layers grown by metalorqanic vapor phase epitaxy

研究成果: Article査読

32 被引用数 (Scopus)

抄録

High purity CuInSe2 heteroepitaxial layers were successfully grown by low-pressure metalorganic vapor phase epitaxy. A certain amount of excitonic absorption was found in the optical absorption spectra even at room temperature (RT). A predominant near-band-edge photoluminescence peak was observed at RT for the first time from a (001) oriented epilayer grown on a GaAs(001) substrate. The epilayers were grown in order to carry out a systematic investigation of intrinsic defects and intentional dopants in the matrix.

本文言語English
ページ(範囲)1840-1842
ページ数3
ジャーナルApplied Physics Letters
70
14
DOI
出版ステータスPublished - 1997 4月 7
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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