Room temperature logic inverter on epitaxial graphene-on-silicon device

Amine El Moutaouakil, Hyun Chul Kang, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Eiichi Sano, Maki Suemitsu, Taiichi Otsuji

研究成果: Article査読

22 被引用数 (Scopus)

抄録

The inverting operation of a logic inverter, using two back-gate epitaxial graphene-on-silicon field-effect transistors (GOSFETs), is demonstrated at room temperature. Thanks to the asymmetric ambipolarity of the fabricated GOSFETs, owing to the undesirable back-gate leakage, the on/off state current has been dramatically reduced. This results in a well matched input/output voltage levels for a wide VDD range from more than 1 V down to 0.5 V. The inverting operation of the device is obtained at as low VDD bias as 0.5 V. Voltage gains higher than the unity are also obtained. The experimental results are in good agreement with the simulation results made for the case of asymmetric ambipolar transistors.

本文言語English
論文番号070113
ジャーナルJapanese journal of applied physics
50
7 PART 1
DOI
出版ステータスPublished - 2011 7月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Room temperature logic inverter on epitaxial graphene-on-silicon device」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル