Room temperature bonding of wafers with thin nanocrystalline metal films

T. Shimatsu, M. Uomoto

研究成果: Conference contribution

44 被引用数 (Scopus)

抄録

Room temperature bonding between two flat wafers using thin metal films was studied. Thin nanocrystalline metal films (0.2-20 nm thick) were fabricated on two flat wafers' surfaces using sputter deposition. Bonding of the two metal films on the wafers was accomplished immediately after film deposition in vacuum. The wafers were bonded at room temperature over the entire bonded area using metal films of 16 kinds including W films. The two films' bonded structure was related closely to the self-diffusion coefficients of the metal films. The very high atomic diffusion coefficient at the grain boundaries and film surfaces is likely to have enabled bonding at room temperature. The wafers were bonded even with films of 0.2 nm thickness on each side. The potential of the bonding for applications to device fabrication is examined. Moreover, bonding in air using noble metal films is examined according to experimental results.

本文言語English
ホスト出版物のタイトルSemiconductor Wafer Bonding 11
ホスト出版物のサブタイトルScience, Technology, and Applications - In Honor of Ulrich Gosele
ページ61-72
ページ数12
4
DOI
出版ステータスPublished - 2010 12 1
イベントSemiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting - Las Vegas, NV, United States
継続期間: 2010 10 102010 10 15

出版物シリーズ

名前ECS Transactions
番号4
33
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

OtherSemiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/10/15

ASJC Scopus subject areas

  • Engineering(all)

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