Roles of carbon impurities and intrinsic nonradiative recombination centers on the carrier recombination processes of GaN crystals

Kazunobu Kojima, Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Hajime Fujikura, Shigefusa F. Chichibu

研究成果: Article査読

16 被引用数 (Scopus)

抄録

The relationship between the concentration of carbon (C) impurity, [C], and quantum efficiency (QE) of radiation in n-type GaN crystals was clarified under photo-excitation conditions at room temperature. Since C acts as a trap for minority holes as well as a compensator for majority electrons, the external QE (EQE) and internal QE (IQE) values for the near-band-edge (NBE) emission showed a monotonic increase with decreasing [C], where NBE EQE (IQE) values are 0.02% (0.70%) and 0.53% (14.2%) for [C] = 2.0 × 1016 cm-3 and [C] = 4.0 × 1014 cm-3, respectively, under a cw photo-pumping density of 140 W cm-2.

本文言語English
論文番号012004
ジャーナルApplied Physics Express
13
1
DOI
出版ステータスPublished - 2020 1月 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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