Role of the Cr Buffer Layer in the Thickness-Dependent Ultrafast Magnetization Dynamics of Co2Fe0.4Mn0.6Si Heusler Alloy Thin Films

Santanu Pan, Takeshi Seki, Koki Takanashi, Anjan Barman

研究成果: Article査読

14 被引用数 (Scopus)

抄録

The epitaxial growth of the Co2Fe0.4Mn0.6Si (CFMS) Heusler alloy on MgO with high crystal orientation requires the use of a buffer layer. The utilization of the Cr buffer layer in a controlled manner without hampering the intrinsic CFMS properties remains a challenge. Here, we epitaxially grow the CFMS films on a Cr-buffered MgO substrate and investigate the thickness (t)-dependent variation in structural ordering, and its impact on magnetic Gilbert damping and magnetic anisotropy. We observe a regular improvement in the crystal structure with increasing t, which causes a similar increasing trend in saturation magnetization and magnetocrystalline anisotropy. Interestingly, we achieve a very low t-independent value of Gilbert damping parameter (α) of ∼0.0045 because of an unaltered atomic-site ordering which indicates a different origin of magnetocrystalline anisotropy and α in this system. Notably, α also remains nearly independent of frequency (f) for a lower thickness regime in these CFMS films. The observation of a t-independent and f-independent value of α strongly suggests the suitability of a thinner CFMS film for device applications in the broadband frequency regime.

本文言語English
論文番号064012
ジャーナルPhysical Review Applied
7
6
DOI
出版ステータスPublished - 2017 6 12

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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