Role of oxygen in Hf-based high-k gate stacks on Vfb shifts

Toshihide Nabatame, Akihiko Ohi, Toyohiro Chikyow

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We have investigated the role of oxygen in Hf-based high-k gate stacks on Vfb shift. It is clearly shown that the Vfb of the HfSiOx-based high-k materials of the weak ionic oxide was almost constant irrespective of the oxidation annealing temperature. On the other hand, the HfO2-based high-k materials of the strong ionic oxide caused the positive Vfb shifts by introducing additional oxygen into high-k films. These suggest that the control of strength of ionic bond and oxygen content due to the oxygen transfer at hetero interface of ionic high-k/covalent SiO2 is a key if it assumes that the Vfb shift occurs dominantly at high-k/SiO2 interface.

本文言語English
ホスト出版物のタイトルICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
ページ986-989
ページ数4
DOI
出版ステータスPublished - 2010 12月 1
外部発表はい
イベント2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
継続期間: 2010 11月 12010 11月 4

出版物シリーズ

名前ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
国/地域China
CityShanghai
Period10/11/110/11/4

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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