Role of nitrogen incorporation into Hf-based high-& gate dielectrics for termination of local current leakage paths

Heiji Watanabe, Satoshi Kamiyama, Naoto Umezawa, Kenji Shiraishi, Shiniti Yoshida, Yasumasa Watanabe, Tsunetoshi Arikado, Toyohiro Chikyow, Keisaku Yamada, Kiyoshi Yasutake

研究成果: Article査読

20 被引用数 (Scopus)

抄録

We studied effects of nitrogen incorporation into Hf-based high-k gate dielectrics on local insulating properties by conductive atomic force microscopy. Nitrogen-incorporated HfSiO/HfO2/SiO2 gate stacks exhibited excellent dielectric reliability, whereas we observed the creation of local leakage sites for untreated gate stacks, i.e., without nitridation. Both types of high-k dielectric layers were crystallized, and there was no relationship between the current leakage sites and surface morphology. These findings indicate that grain boundaries of the high-k films do not act as the leakage sites. Instead, we propose nitrogen incorporation as an important method for terminating the current leakage paths and discuss detailed mechanisms based on first-principles calculations.

本文言語English
ページ(範囲)L1333-L1336
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
44
42-45
DOI
出版ステータスPublished - 2005 12 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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