Role of irradiation-induced defects on SiC dissolution in hot water

Sosuke Kondo, Shinichiro Mouri, Yoshihiro Hyodo, Tatsuya Hinoki, Fumihisa Kano

研究成果: Article査読

31 被引用数 (Scopus)

抄録

An enhancement of the dissolution of high-purity 3C-SiC in hot water (320 °C, 20 MPa: relevant to the light-water reactor coolant condition) is demonstrated after 5.1 MeV Si-ion irradiation. Optical spectrometry and Kelvin force microscopy revealed the creation of interband-defect localized states within the bandgap. The dissolution rate was found to be dependent on the irradiation fluence, irradiation-induced volume expansion, and the photoluminescence quenching. An annealing study showed prevention of irradiation-enhanced dissolution with the recovery of most defects. These results show that the dissolution rates of irradiated SiC are increased with the population of irradiation-induced defects.

本文言語English
ページ(範囲)402-407
ページ数6
ジャーナルCorrosion Science
112
DOI
出版ステータスPublished - 2016 11月 1
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 化学工学(全般)
  • 材料科学(全般)

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