Role of hydrogen prepairing in the hydrogen desorption kinetics from Si(100)-2×1: Effects of hydrogenating-gas and thermal history

Hideki Nakazawa, Maki Suemitsu, Nobuo Miyamoto

研究成果: Article査読

14 被引用数 (Scopus)

抄録

Hydrogen desorption kinetics from Si(100)-2×1:H has been systematically investigated using temperature-programmed desorption (TPD) on several hydrogenating gases and thermal conditions. As a result, the desorption kinetic order with the hydrogen coverage was found to increase in the order: atomic hydrogen<disilane<silane and room-temperature adsorption<high-temperature adsorption<post-annealing. These variations in kinetic order, depicted as a TPD peak shift at low hydrogen coverages, are universally described with a single surface parameter, γ0, the fractional coverage of unpaired hydrogen atoms. Fitting with obtained TPD spectra demonstrates that γ0 is a delicate function of the hydrogenating gas and thermal history.

本文言語English
ページ(範囲)177-185
ページ数9
ジャーナルSurface Science
465
1-2
DOI
出版ステータスPublished - 2000 10月 10
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

フィンガープリント

「Role of hydrogen prepairing in the hydrogen desorption kinetics from Si(100)-2×1: Effects of hydrogenating-gas and thermal history」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル