Role of high-k interlayer in ZrO2/high-k/ZrO2 insulating multilayer on electrical properties for DRAM capacitor

T. Onaya, T. Nabatame, T. Sawada, K. Kurishima, N. Sawamoto, A. Ohi, T. Chikyow, A. Ogura

研究成果: Conference contribution

9 被引用数 (Scopus)

抄録

We studied characteristic of Metal-Insulator-Metal capacitors with ZrO2/high-k/ZrO2 (Z/high-k/Z)-nanolaminate dielectric layers and TiN electrodes. Amorphous Al2O3, (Ta/Nb)Ox (TN) and (Ta/Nb)Ox- Al2O3 (TNA) as high-k interlayer were prepared by atomic layer deposition and post-deposition annealing. The dielectric constant (k) of ZrO2 thin film exhibited about 28 because of tetragonal, orthorhombic and cubic phases. The k value of Z/high-k/Znanolaminate dielectric layer is high in order of ZTNZ > ZTNAZ > ZAZ due to the dependence of each k value of Al2O3 (∼ 9) and TN (∼29). The ZTNAZ layer exhibited lowest leakage current density of 10-8 ∼ 10-7 A/cm2 at 0.6 V compared to those of ZAZ and ZTNZ in CET ∼ 1.1 nm. We found that the leakage current property of Z/high-k/Z layer is influenced by not only amorphous structure but also band gap width (conduction band offset of ZrO2) of high-k interlayer. We conclude that the TNA material is one of the candidate material as high-k interlayer for future DRAM.

本文言語English
ホスト出版物のタイトルSiGe, Ge, and Related Materials
ホスト出版物のサブタイトルMaterials, Processing, and Devices 7
編集者J. Murota, B. Tillack, M. Caymax, G. Masini, D. L. Harame, S. Miyazaki
出版社Electrochemical Society Inc.
ページ667-674
ページ数8
8
ISBN(電子版)9781607685395
DOI
出版ステータスPublished - 2016 1 1
外部発表はい
イベントSymposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting - Honolulu, United States
継続期間: 2016 10 22016 10 7

出版物シリーズ

名前ECS Transactions
番号8
75
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Conference

ConferenceSymposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting
国/地域United States
CityHonolulu
Period16/10/216/10/7

ASJC Scopus subject areas

  • 工学(全般)

フィンガープリント

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