RF responses of double-junction SQUID models

Y. Mizugaki, J. Chen, K. Nakajima, T. Yamashita

研究成果: Conference article査読

5 被引用数 (Scopus)

抄録

We present numerical investigation of the RF properties of a double-junction SQUID model, which is referred to as an RF-field-driven double-junction SQUID (RFDS). The RFDS generates large current steps, the order of which can be controlled by external dc field. We simulate the current-voltage characteristics of the RFDS in the normalized frequency range from 0.065 to 5.0. In comparison with the results for a single junction, the step heights of the RFDS are much larger for the low frequency region; e.g. the first step of the RFDS becomes nine times larger than that of a single junction when a dc flux of 0.5φ0 is applied (φ0 is a flux quantum). For the high frequency region, the step height of the RFDS is comparable to that of a single junction. The results suggest that the RFDS should be applicable as a wide-band RF detector.

本文言語English
ページ(範囲)992-994
ページ数3
ジャーナルSuperconductor Science and Technology
12
11
DOI
出版ステータスPublished - 1999 11月
イベントProceedings of the 1999 International Superconductive Electronics Conference - Berkeley, CA, USA
継続期間: 1999 6月 211999 6月 25

ASJC Scopus subject areas

  • セラミックおよび複合材料
  • 凝縮系物理学
  • 金属および合金
  • 電子工学および電気工学
  • 材料化学

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