RF-MBE growth of InAsN layers on GaAs (0 0 1) substrates using a thick InAs buffer layer

Susumu Nishio, Atsushi Nishikawa, Ryuji Katayama, Kentaro Onabe, Yasuhiro Shiraki

研究成果: Conference article査読

12 被引用数 (Scopus)

抄録

The InAsN epilayers have been successfully grown on GaAs (0 0 1) substrates with a ∼ 0.8-μm-thick InAs buffer layer by radio-frequency plasma-source molecular beam epitaxy. A series of samples obtained at different growth temperatures have been analyzed by high-resolution X-ray diffraction and atomic force microscopy to characterize the structural properties. The strain and the nitrogen concentration of the InAsN epilayers grown on InAs (0 0 1) substrates have also been evaluated for application to those on the InAs buffer layer on the GaAs substrates. The maximum nitrogen concentration of the epilayers grown on the GaAs substrate was estimated to be 1.62% when the growth temperature was 420°C.

本文言語English
ページ(範囲)422-426
ページ数5
ジャーナルJournal of Crystal Growth
251
1-4
DOI
出版ステータスPublished - 2003 4 1
イベントProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
継続期間: 2002 9 152002 9 20

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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