Revolutional progress of silicon technologies exhibiting very high speed performance over a 50-GHz clock rate

Tadahiro Ohmi, Akinobu Teramoto, Rihito Kuroda, Naoto Miyamoto

研究成果: Article査読

54 被引用数 (Scopus)

抄録

Current silicon technologies are now facing very severe standstill, i.e., the operation speed is strictly limited at a clock rate of about 3.8 GHz due to the limitation of the thinning of the gate insulator film thickness because of its large amount of leakage currents through the current thermal oxide films. This typical disadvantage of current silicon technologies has been completely overcome by introducing the newly developed radical-reaction-based semiconductor manufacturing instead of the current molecule-reaction-based semiconductor manufacturing, i.e., direct nitridation films such as Si3 N4 where the gate leakage current through the insulator films has been confirmed to be decreased by a factor of at least three orders of magnitude. The speed performance of silicon large-scale integrations is enhanced to exhibit a clock rate of more than 50 GHz by introducing the balanced complementary MOS on a silicon (551) surface substrate using 3-D-structured MOS transistors, where new key technologies must be introduced, namely: 1) direct nitridation gate insulator film Si3N4 for 3-D MOS transistors; 2) atomic-order flat-gate insulator film/silicon interface; 3) drastically decreased series resistance of the source and drain electrodes by a factor of two orders of magnitude; and 4) introduction of the accumulation-mode MOS transistors instead of the inversion-mode MOS transistors.

本文言語English
ページ(範囲)1471-1477
ページ数7
ジャーナルIEEE Transactions on Electron Devices
54
6
DOI
出版ステータスPublished - 2007 6月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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