Revisiting room-temperature 1.54 μm photoluminescence of ErOx centers in silicon at extremely low concentration

Enrico Prati, Michele Celebrano, Lavinia Ghirardini, Paolo Biagioni, Marco Finazzi, Yasuo Shimizu, Yuan Tu, Koji Inoue, Yasuyoshi Nagai, Takahiro Shinada, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takashi Tanii

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

Luminescence of erbium in silicon has been intensively explored in the past in the high power emission regime, but its employment for manufacturability of active components for silicon photonics proved unfeasible. We explore the room-temperature photoluminescence (PL) at the telecomm wavelength of very low implantation doses of ErOx in Si for accessing few photon regime towards single photon emission. We achieve countable photon regime and we assess the lower-bound number of detectable emission centers by micron scale implanted dots, whose emission is collected by an inverted confocal microscope.

本文言語English
ホスト出版物のタイトル2017 Silicon Nanoelectronics Workshop, SNW 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ページ105-106
ページ数2
ISBN(電子版)9784863486478
DOI
出版ステータスPublished - 2017 12 29
イベント22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
継続期間: 2017 6 42017 6 5

出版物シリーズ

名前2017 Silicon Nanoelectronics Workshop, SNW 2017
2017-January

Other

Other22nd Silicon Nanoelectronics Workshop, SNW 2017
国/地域Japan
CityKyoto
Period17/6/417/6/5

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

フィンガープリント

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