Reversible switching of charge injection barriers at metal/organic- semiconductor contacts modified with structurally disordered molecular monolayers

Ryo Nouchi, Masanori Shigeno, Nao Yamada, Tomoaki Nishino, Katsumi Tanigaki, Masahiko Yamaguchi

研究成果: Article査読

13 被引用数 (Scopus)

抄録

Metal/semiconductor interfaces govern the operation of semiconductor devices through the formation of charge injection barriers that can be controlled by tuning the metal work function. However, the controlling ability is typically limited to being static. We show that a dynamic nature can be imparted to the interfaces using electrode surface modification with a structurally disordered molecular monolayer. The barrier height at the interfaces is altered significantly in a reversible way by an external electric field. As a result, a dramatic change in the carrier transport properties through the interfaces is observed, such as a reversible polarity reversion of metal/organic-semiconductor/metal diodes.

本文言語English
論文番号013308
ジャーナルApplied Physics Letters
104
1
DOI
出版ステータスPublished - 2014 1月 6

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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