Reversible switching of charge injection barriers at metal/organic- semiconductor contacts modified with structurally disordered molecular monolayers

Ryo Nouchi, Masanori Shigeno, Nao Yamada, Tomoaki Nishino, Katsumi Tanigaki, Masahiko Yamaguchi

研究成果: Article

12 引用 (Scopus)

抜粋

Metal/semiconductor interfaces govern the operation of semiconductor devices through the formation of charge injection barriers that can be controlled by tuning the metal work function. However, the controlling ability is typically limited to being static. We show that a dynamic nature can be imparted to the interfaces using electrode surface modification with a structurally disordered molecular monolayer. The barrier height at the interfaces is altered significantly in a reversible way by an external electric field. As a result, a dramatic change in the carrier transport properties through the interfaces is observed, such as a reversible polarity reversion of metal/organic-semiconductor/metal diodes.

元の言語English
記事番号013308
ジャーナルApplied Physics Letters
104
発行部数1
DOI
出版物ステータスPublished - 2014 1 6

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

フィンガープリント Reversible switching of charge injection barriers at metal/organic- semiconductor contacts modified with structurally disordered molecular monolayers' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用