Reuse of scalmgo4 substrates utilized for halide vapor phase epitaxy of gan

Kazuki Ohnishi, Shigeyuki Kuboya, Tomoyuki Tanikawa, Takuya Iwabuchi, Kazuya Yamamura, Noriyuki Hasuike, Hiroshi Harima, Tsuguo Fukuda, Takashi Matsuoka

研究成果: Article査読

抄録

ScAlMgO4 (SCAM) substrates with a small lattice-mismatch to GaN and c-plane cleavability are promising for fabricating high-quality free-standing GaN wafers. To reduce the cost in the fabrication of free-standing GaN wafers, the reuse of a SCAM substrate is demonstrated. By cleaving a SCAM substrate which has been already utilized for the growth of a thick GaN film by halide vapor phase epitaxy, the atomically flat surface can be obtained. The threading dislocation density of a 320 μm thick GaN film grown on this cleaved SCAM substrate is 2.4 × 107 cm-2, which is almost the same as that on a new SCAM substrate. This result indicates that a SCAM substrate can be reused for GaN growth.

本文言語English
論文番号SC1023
ジャーナルJapanese journal of applied physics
58
SC
DOI
出版ステータスPublished - 2019 1 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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