Retention of hydrogen implanted into SiC single crystals

Shinji Nagata, S. Yamaguchi, Y. Fujino, M. Hirabayashi, K. Kamada

研究成果: Article査読

23 被引用数 (Scopus)

抄録

By means of the elastic recoil detection (ERD) analysis technique, H and D concentration distributions in SiC single crystals implanted with 13 keV H+ and 10 keV D+ were measured. The profiles obtained were compared with simulated range profiles as well as defect distributions created during the implantation. The thermal release of D retained in the crystal was studied by isochronal annealing up to 1200 °C. The binding energy of D in SiC was estimated to be 4.0±0.2 eV.

本文言語English
ページ(範囲)760-763
ページ数4
ジャーナルJournal of Nuclear Materials
128-129
C
DOI
出版ステータスPublished - 1984 1 1

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 原子力エネルギーおよび原子力工学
  • 材料科学(全般)

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