By means of the elastic recoil detection (ERD) analysis technique, H and D concentration distributions in SiC single crystals implanted with 13 keV H+ and 10 keV D+ were measured. The profiles obtained were compared with simulated range profiles as well as defect distributions created during the implantation. The thermal release of D retained in the crystal was studied by isochronal annealing up to 1200 °C. The binding energy of D in SiC was estimated to be 4.0±0.2 eV.
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