Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system

T. Kobayashi, J. Van Der Heijden, M. G. House, S. J. Hile, P. Asshoff, M. F. Gonzalez-Zalba, M. Vinet, M. Y. Simmons, S. Rogge

研究成果: Article査読

6 被引用数 (Scopus)

抄録

We report on electronic transport measurements through a silicon double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO2 interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160 and 240 μeV with an electric field dependence 1.2 ± 0.2 meV/(MV/m). A large valley splitting is an essential requirement for implementing a physical electron spin qubit in a silicon quantum dot.

本文言語English
論文番号152102
ジャーナルApplied Physics Letters
108
15
DOI
出版ステータスPublished - 2016 4 11

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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