抄録
We report on electronic transport measurements through a silicon double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO2 interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160 and 240 μeV with an electric field dependence 1.2 ± 0.2 meV/(MV/m). A large valley splitting is an essential requirement for implementing a physical electron spin qubit in a silicon quantum dot.
本文言語 | English |
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論文番号 | 152102 |
ジャーナル | Applied Physics Letters |
巻 | 108 |
号 | 15 |
DOI | |
出版ステータス | Published - 2016 4 11 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)