Resonant photocurrent at 1550 nm in an erbium low-doped silicon transistor at room temperature

Enrico Prati, Michele Celebrano, Lavinia Ghirardini, Marco Finazzi, Giorgio Ferrari, Takahiro Shinada, Keinan Gi, Yuki Chiba, Ayman Abdelghafar, Maasa Yano, Takashi Tanii

研究成果: Conference contribution

抄録

We report on the photocurrent induced by 1550 nm laser irradiation in a Er-doped micron-scale silicon transistor. The erbium defects, activated in the channel of the transistor thanks to oxygen codoping, make it possible to observe a resonant photocurrent at telecom wavelength and at room temperature by using a supercontinuum laser source working in the μW range. By exploiting a back-gate, the transistor is tuned to exploit only the electrons lying in the Er-O states. We estimate a relatively small number of photoexcited atoms (∼ 4× 104) making Er-dpoed silicon a candidate for designing resonance-based frequency selective single photon detectors at 1550 nm for quantum communications.

本文言語English
ホスト出版物のタイトル2019 Silicon Nanoelectronics Workshop, SNW 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9784863487024
DOI
出版ステータスPublished - 2019 6
イベント24th Silicon Nanoelectronics Workshop, SNW 2019 - Kyoto, Japan
継続期間: 2019 6 92019 6 10

出版物シリーズ

名前2019 Silicon Nanoelectronics Workshop, SNW 2019

Conference

Conference24th Silicon Nanoelectronics Workshop, SNW 2019
CountryJapan
CityKyoto
Period19/6/919/6/10

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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