Resistivity reduction by external oxidation of Cu-Mn alloy films for semiconductor interconnect application

J. Iijima; Y. Fujii; K. Neishi; Junichi Koike

doi:10.1116/1.3179167

Resistivity reduction by external oxidation of Cu-Mn alloy films for semiconductor interconnect application

J. Iijima, Y. Fujii, K. Neishi, Junichi Koike

未来科学技術共同研究センター

研究成果: Article › 査読

45 被引用数 (Scopus)

抄録

A self-forming barrier process using Cu-Mn alloy has been reported to exhibit excellent reliability for interconnect lines in advanced semiconductor devices. However, Mn increases resistivity. In this work, the authors investigated optimum annealing conditions to remove Mn from the Cu-Mn alloy by forming an external Mn oxide and to reduce resistivity to a level of pure Cu. The results were interpreted by an external oxidation mechanism of Mn atoms.

本文言語	English
ページ（範囲）	1963-1968
ページ数	6
ジャーナル	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
巻	27
号	4
DOI	https://doi.org/10.1116/1.3179167
出版ステータス	Published - 2009 8月 14

ASJC Scopus subject areas

凝縮系物理学
電子工学および電気工学

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AB - A self-forming barrier process using Cu-Mn alloy has been reported to exhibit excellent reliability for interconnect lines in advanced semiconductor devices. However, Mn increases resistivity. In this work, the authors investigated optimum annealing conditions to remove Mn from the Cu-Mn alloy by forming an external Mn oxide and to reduce resistivity to a level of pure Cu. The results were interpreted by an external oxidation mechanism of Mn atoms.

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Resistivity reduction by external oxidation of Cu-Mn alloy films for semiconductor interconnect application

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