Resistivity and morphology of TiSi2 formed on Xe +-implanted polycrystalline silicon

Hiroki Kuwano, J. R. Phillips, J. W. Mayer

研究成果: Article査読

29 被引用数 (Scopus)


Xe ion irradiation of polycrystalline silicon before Ti deposition is found to affect subsequent silicide formation. Silicide films were prepared by implanting 60, 100, or 240 keV Xe+ ions into 500-nm-thick undoped polycrystalline silicon before depositing Ti and annealing in vacuum. Preimplantation altered the subsequent silicide resistivity, x-ray diffraction patterns, and morphology as compared to films prepared on unimplanted polycrystalline Si substrates. We found that minimal TiSi2 resistivities were achieved at lower temperatures with preimplantation, indicating that the Xe-implanted substrate promotes a lower temperature transition from the metastable C49 phase to the low-resistivity equilibrium C54 phase of TiSi2. X-ray diffraction results confirmed the lower temperature formation of the C54 phase with preimplantation. Low-temperature annealing (650°C, 30 min) of 6×1016 cm -2, 240 keV Xe+-implanted samples yielded low-resistivity (∼22 μΩ cm) silicide films, while simultaneously annealed samples without preimplantation had resistivity five times higher. Lower doses were effective at lower implant energies, with low resistivity achieved after 725°C, 30 min annealing for 2×101 5 cm-2, 60 keV Xe+ preimplantation.

ジャーナルApplied Physics Letters
出版ステータスPublished - 1990

ASJC Scopus subject areas

  • 物理学および天文学(その他)


「Resistivity and morphology of TiSi<sub>2</sub> formed on Xe <sup>+</sup>-implanted polycrystalline silicon」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。