Resistive transition in YBa2Cu3Oz and Bi2(Sr,Ca)3Cu2Oz CVD films under high magnetic field

N. Kobayashi, H. Iwasaki, H. Kawabe, K. Watanabe, H. Yamane, H. Kurosawa, H. Masumoto, T. Hirai, Y. Muto

研究成果: Article査読

47 被引用数 (Scopus)


Electrical resistance of YBa2Cu3Oz and Bi2(Sr,Ca)3Cu2Oz CVD films in the mixed state was investigated in magnetic field up to 25 T. The sheet resistance in the broad transition is expressed by R=R0exp(-U0/kBT) on the low temperature side, and it is independent of the configuration of current with respect to the magnetic field. The activation energy U0 is larger in YBa2Cu3Oz films. The U0 value becomes smaller proportional to B with increasing field. Moreover, the resistance follows a power law of Bγ at constant temperature. The value of exponent γ is larger than unity and increases with decreasing temperature. These behaviors are discussed based on the flux creep models by Tinkham and by Dew-Hughes.

ジャーナルPhysica C: Superconductivity and its applications
出版ステータスPublished - 1989 6 15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • エネルギー工学および電力技術
  • 電子工学および電気工学


「Resistive transition in YBa<sub>2</sub>Cu<sub>3</sub>O<sub>z</sub> and Bi<sub>2</sub>(Sr,Ca)<sub>3</sub>Cu<sub>2</sub>O<sub>z</sub> CVD films under high magnetic field」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。