Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation

Takeo Ohno, Seiji Samukawa

研究成果: Article査読

24 被引用数 (Scopus)

抄録

Resistive switching in a Cu/Ta2O5/Pt structure that consisted of a few nanometer-thick Ta2O5 film was demonstrated. The Ta2O5 film with thicknesses of 2-5 nm was formed with a combination of Ta metal film deposition and neutral oxygen particle irradiation at room temperature. The device exhibited a bipolar resistive switching with a threshold voltage of 0.2 V and multilevel switching operation.

本文言語English
論文番号173110
ジャーナルApplied Physics Letters
106
17
DOI
出版ステータスPublished - 2015 4 27

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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