Resistive switching characteristics in memristors with Al2O3/TiO2 and TiO2/Al2O3 bilayers

Liudmila Alekseeva, Toshihide Nabatame, Toyohiro Chikyow, Anatolii Petrov

研究成果: Article査読

21 被引用数 (Scopus)

抄録

Differences between the resistive switching characteristics of Al2O3/TiO2 and TiO2/Al2O3 bilayer structures, fabricated by atomic layer deposition at 200 °C and post-deposition annealing, were studied in Pt bottom electrode (Pt-BE)/insulator/Pt top electrode (Pt-TE) capacitors. The Pt-BE/Al2O3/TiO2/Pt-TE capacitor exhibits stable bipolar resistive switching with an on-resistance/off-resistance ratio of ∼102 controlled by a small voltage of ±0.8 V. The forming process occurs in two steps of breaking of the Al2O3 layer and transfer of oxygen vacancies (VO) into the TiO2 layer. The capacitor showed poor endurance, particularly in the high-resistance state under vacuum conditions. This indicates that the insulating TiO2 layer without VO is not formed near the Al2O3 layer because oxygen cannot be introduced from the exterior. On the other hand, in the Pt-BE/TiO2/Al2O3/Pt-TE capacitor, multilevel resistive switching with several applied voltage-dependent nonvolatile states is observed. The switching mechanism corresponds to the Al2O3 layer's trapped VO concentration, which is controlled by varying the applied voltage.

本文言語English
論文番号08PB02
ジャーナルJapanese journal of applied physics
55
8S2
DOI
出版ステータスPublished - 2016
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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