Resistance spikes induced by gate-controlled valley-splitting in silicon

K. Takashina, A. Fujiwara, Y. Takahashi, Y. Hirayama

研究成果: Article査読

抄録

Landau-level coincidences are examined in a (100) silicon 2DEG by tuning the valley-splitting with front- and back-gates. A coincidence under quantum Hall conditions between levels of opposite spin, opposite valley, but like orbital indices at ν = 6 is found to show suppressed resistance, while in marked contrast, coincidences at ν = 4i (where i is an integer) between adjacent orbital Landau levels exhibit resistance spikes.

本文言語English
ページ(範囲)3603-3608
ページ数6
ジャーナルInternational Journal of Modern Physics B
18
27-29
DOI
出版ステータスPublished - 2004 11 30
外部発表はい

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

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