Resistance ridges along filling factor ν = 4i in SiO2/Si/ SiO2 quantum wells

K. Takashina, M. Brun, T. Ota, D. K. Maude, A. Fujiwara, Y. Ono, H. Inokawa, Y. Hirayama

研究成果: Conference contribution

抄録

We examine Landau level coincidences in SiO2/Si(100)/SiO 2 quantum wells. Surprisingly, under certain conditions of apparent multiple degeneracy, our data reveal strikingly novel behavior where the resistance is elevated at filling factors that are integer multiples of 4. This structure persists when underlying single particle energies are swept leading to resistance ridges running along v = 4i. The data suggest a new type of many-body effect due to the combined degeneracy of valley and spin.

本文言語English
ホスト出版物のタイトルPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
ページ625-626
ページ数2
DOI
出版ステータスPublished - 2007
外部発表はい
イベント28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
継続期間: 2006 7 242006 7 28

出版物シリーズ

名前AIP Conference Proceedings
893
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
国/地域Austria
CityVienna
Period06/7/2406/7/28

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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