TY - JOUR
T1 - Resistance dependence of transport properties in metal-multiwall carbon nanotube-metal structures
AU - Kanda, Akinobu
AU - Tsukagoshi, Kazuhito
AU - Uryu, Seiji
AU - Ootuka, Youiti
AU - Aoyagi, Yoshinobu
N1 - Funding Information:
This work was partly supported by ‘Research for the Future’ project and a Grant-in-Aid from Japan Society of Promotion of Science and by Industrial Technology Research Grant in 2001 from New Energy and Industrial Technology Development Organization (NEDO) of Japan.
PY - 2002/8
Y1 - 2002/8
N2 - We have studied current-voltage (I-V) characteristics of metal-on-tube metal-multiwall carbon nanotube-metal structures as a function of gate voltage. Device resistances ranged from about 10 kΩ to several MΩ, depending on the electrode metal and its deposition condition. When the resistance was much higher than the quantum resistance (RQ = h/4e2 ≈ 6.5 kΩ), samples showed clear Coulomb blockade. We find that the tunnel barrier is located in the interface between the MWNT and the metal electrode. As the resistance decreased, the Coulomb oscillations became irregular with respect to the gate voltage, but the high resistance region around V=0 and its dependence on gate voltage survived at resistance smaller than 10 kΩ.
AB - We have studied current-voltage (I-V) characteristics of metal-on-tube metal-multiwall carbon nanotube-metal structures as a function of gate voltage. Device resistances ranged from about 10 kΩ to several MΩ, depending on the electrode metal and its deposition condition. When the resistance was much higher than the quantum resistance (RQ = h/4e2 ≈ 6.5 kΩ), samples showed clear Coulomb blockade. We find that the tunnel barrier is located in the interface between the MWNT and the metal electrode. As the resistance decreased, the Coulomb oscillations became irregular with respect to the gate voltage, but the high resistance region around V=0 and its dependence on gate voltage survived at resistance smaller than 10 kΩ.
KW - Coulomb blockade
KW - Coulomb oscillation
KW - Multiwall carbon nanotube
UR - http://www.scopus.com/inward/record.url?scp=0036679959&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036679959&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(02)00616-0
DO - 10.1016/S0167-9317(02)00616-0
M3 - Article
AN - SCOPUS:0036679959
SN - 0167-9317
VL - 63
SP - 33
EP - 37
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 1-3
ER -