Reproducible trajectory on subnanosecond spin-torque magnetization switching under a zero-bias field for MgO-based ferromagnetic tunnel junctions

研究成果: Article査読

6 被引用数 (Scopus)

抄録

One of the features of spin-transfer torque (STT)-based magnetic random access memories (spin-RAMs) is a fast write cycle; however, switching properties in the subnanosecond regime for MgO-based magnetic tunnel junctions (MTJs) are still unclear. In this work, we demonstrated subnanosecond magnetization switching by STT for MgO-based MTJs. We also discuss the thermal effect on subnanosecond STT switching, as well as the subnanosecond pulse width that is dependent on the remarkable plateau that switching probability has under a zero-bias field.

本文言語English
論文番号142502
ジャーナルApplied Physics Letters
96
14
DOI
出版ステータスPublished - 2010

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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