Reliability study of parasitic source and drain resistances of InP-based HEMTs

T. Suemitsu, Y. K. Fukai, H. Sugiyama, K. Watanabe, H. Yokoyama

研究成果: Conference article査読

8 被引用数 (Scopus)

抄録

The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias and temperature (BT) stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate electrode, causes the source resistance (Rs) to increase at large drain bias voltages. The increase in Rs can be prevented by using InP or InAlP as the carrier supply layer material instead of InAlAs. On the other hand, drain resistance (Rd) increased due to carrier depletion in the drain ohmic region, which occurs not only in the recess region but also in the n+-capped region between the gate recess and the drain electrode, which is also affected by hot-carrier-induced damage.

本文言語English
ページ(範囲)190-193
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータスPublished - 2000 12 1
外部発表はい
イベント2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
継続期間: 2000 12 102000 12 13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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