Reliability of wire-bonding and solder joint for high temperature operation of power semiconductor device

Y. Yamada, Y. Takaku, Y. Yagi, I. Nakagawa, T. Atsumi, M. Shirai, I. Ohnuma, K. Ishida

研究成果: Article査読

92 被引用数 (Scopus)

抄録

Thick Al wires bonded on chips of power semiconductor devices were examined for thermal cycle tests, then the bonded joints were cut using microtome method, after that those were observed by scanning electron microscope and analyzed by electron back scattered diffraction. Some cracks were observed between Al wires and the chips, unexpectedly the crack lengths were almost constant for -40/150 °C, -40/200 °C and -40/250 °C tests. It is considered that re-crystallization has been progressed during the high temperature side of the thermal cycle tests. Furthermore, joint samples were prepared using high temperature solders such as Zn-Al and Bi with CuAlMn, Direct Bonded Copper insulated substrates and Mo heatsinks. The fabricated samples were evaluated by scanning acoustic microscope before and after thermal cycle tests. Consequently, almost neither serious damages nor delaminations were observed for -40/200 °C and -40/250 °C tests.

本文言語English
ページ(範囲)2147-2151
ページ数5
ジャーナルMicroelectronics Reliability
47
12
DOI
出版ステータスPublished - 2007 12月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 安全性、リスク、信頼性、品質管理
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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