Relaxations of the surface photovoltage effect on the atomically controlled semiconductor surfaces studied by time-resolved photoemission spectroscopy

M. Ogawa, S. Yamamoto, K. Fujikawa, R. Hobara, R. Yukawa, Sh Yamamoto, S. Kitagawa, D. Pierucci, M. G. Silly, C. H. Lin, R. Y. Liu, H. Daimon, F. Sirotti, S. J. Tang, I. Matsuda

研究成果: Article査読

21 被引用数 (Scopus)

抄録

We have systematically investigated relaxation of the surface photovoltage effect on the atomically controlled In/Si(111) surfaces with distinctive surface states and different amounts of the surface band bending. The temporal variations were traced in real time by time-resolved photoemission spectroscopy using soft x-ray synchrotron radiation. The relaxation is found to be temporally limited by two steps of the carrier transfer from the bulk to the surface: the tunneling process at a delay time ≤100 ns and the thermionic process on the following time scale (≥100 ns). Crossover of the two mechanisms can be understood by breakdown of the quantum tunneling regime by the increase in width of the space-charge layer during the relaxation.

本文言語English
論文番号165313
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
88
16
DOI
出版ステータスPublished - 2013 10月 21
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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