Relaxation of photoinjected spins during drift transport in GaAs

H. Sanada, I. Arata, Y. Ohno, Z. Chen, K. Kayanuma, Y. Oka, F. Matsukura, H. Ohno

研究成果: Article査読

55 被引用数 (Scopus)

抄録

We studied the transport of photoinjected spins in GaAs by time-resolved photoluminescence measurements. At low temperatures, the spin polarization after drift transport of 4 μm is found to decrease as the applied electric field E increases to a few kV/cm, and it disappears when E exceeds 3 kV/cm. The origin of the field-dependent spin relaxation is discussed.

本文言語English
ページ(範囲)2788-2790
ページ数3
ジャーナルApplied Physics Letters
81
15
DOI
出版ステータスPublished - 2002 10月 7

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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