Relaxation of photoinjected spins during drift transport in GaAs

H. Sanada; I. Arata; Y. Ohno; Z. Chen; K. Kayanuma; Y. Oka; F. Matsukura; H. Ohno

doi:10.1063/1.1512818

Relaxation of photoinjected spins during drift transport in GaAs

H. Sanada, I. Arata, Y. Ohno, Z. Chen, K. Kayanuma, Y. Oka, F. Matsukura, H. Ohno

研究成果: Article › 査読

55 被引用数 (Scopus)

抄録

We studied the transport of photoinjected spins in GaAs by time-resolved photoluminescence measurements. At low temperatures, the spin polarization after drift transport of 4 μm is found to decrease as the applied electric field E increases to a few kV/cm, and it disappears when E exceeds 3 kV/cm. The origin of the field-dependent spin relaxation is discussed.

本文言語	English
ページ（範囲）	2788-2790
ページ数	3
ジャーナル	Applied Physics Letters
巻	81
号	15
DOI	https://doi.org/10.1063/1.1512818
出版ステータス	Published - 2002 10月 7

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.1512818

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AU - Oka, Y.

AU - Matsukura, F.

AU - Ohno, H.

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Relaxation of photoinjected spins during drift transport in GaAs

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