Relationships between interface structures and electrical properties in the high-κ/III-V system

Tetsuji Yasuda, Noriyuki Miyata, Yuji Urabe, Hiroyuki Ishii, Taro Itatani, Hideki Takagi, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Akihiro Ohtake, Masafumi Yokoyama, Takuya Hoshii, Takashi Haimoto, Momoko Deura, Masakazu Sugiyama, Mitsuru Takenaka, Shinichi Takagi

研究成果: Conference contribution

7 被引用数 (Scopus)


Integration of III-V channel MISFETs on the Si platform expectedly improves the performance and reduces the power consumption of CMOS devices with sub-10 nm gate lengths. Issues relating to the dielectrics/III-V interfaces are explored in this paper. A wide variety of interface structures were prepared by employing MOCVD-grown epitaxial wafers, surface reconstruction control in MBE, wet/dry surface pretreatments, and deposition of dielectrics (Al 2O3, HfO2) by ALD or electron-beam evaporation. Relationships between the structures of the interfaces and the MIS properties are discussed, with particular attention to the effects of the cation composition (Al, Ga, In) in the semiconductor bulk and at the interface, anion control at the interface (sulfidation, nitridation), and the surface orientation [(100) versus (111)]. Recent developments in III-V-on-insulator wafer technology are also reported.

ホスト出版物のタイトルHigh-k Dielectrics on Semiconductors with High Carrier Mobility
出版ステータスPublished - 2010
イベント2009 MRS Fall Meeting - Boston, MA, United States
継続期間: 2009 11月 302009 12月 4


名前Materials Research Society Symposium Proceedings


Other2009 MRS Fall Meeting
国/地域United States
CityBoston, MA

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学


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