TY - GEN
T1 - Relationships between interface structures and electrical properties in the high-κ/III-V system
AU - Yasuda, Tetsuji
AU - Miyata, Noriyuki
AU - Urabe, Yuji
AU - Ishii, Hiroyuki
AU - Itatani, Taro
AU - Takagi, Hideki
AU - Yamada, Hisashi
AU - Fukuhara, Noboru
AU - Hata, Masahiko
AU - Ohtake, Akihiro
AU - Yokoyama, Masafumi
AU - Hoshii, Takuya
AU - Haimoto, Takashi
AU - Deura, Momoko
AU - Sugiyama, Masakazu
AU - Takenaka, Mitsuru
AU - Takagi, Shinichi
PY - 2010
Y1 - 2010
N2 - Integration of III-V channel MISFETs on the Si platform expectedly improves the performance and reduces the power consumption of CMOS devices with sub-10 nm gate lengths. Issues relating to the dielectrics/III-V interfaces are explored in this paper. A wide variety of interface structures were prepared by employing MOCVD-grown epitaxial wafers, surface reconstruction control in MBE, wet/dry surface pretreatments, and deposition of dielectrics (Al 2O3, HfO2) by ALD or electron-beam evaporation. Relationships between the structures of the interfaces and the MIS properties are discussed, with particular attention to the effects of the cation composition (Al, Ga, In) in the semiconductor bulk and at the interface, anion control at the interface (sulfidation, nitridation), and the surface orientation [(100) versus (111)]. Recent developments in III-V-on-insulator wafer technology are also reported.
AB - Integration of III-V channel MISFETs on the Si platform expectedly improves the performance and reduces the power consumption of CMOS devices with sub-10 nm gate lengths. Issues relating to the dielectrics/III-V interfaces are explored in this paper. A wide variety of interface structures were prepared by employing MOCVD-grown epitaxial wafers, surface reconstruction control in MBE, wet/dry surface pretreatments, and deposition of dielectrics (Al 2O3, HfO2) by ALD or electron-beam evaporation. Relationships between the structures of the interfaces and the MIS properties are discussed, with particular attention to the effects of the cation composition (Al, Ga, In) in the semiconductor bulk and at the interface, anion control at the interface (sulfidation, nitridation), and the surface orientation [(100) versus (111)]. Recent developments in III-V-on-insulator wafer technology are also reported.
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M3 - Conference contribution
AN - SCOPUS:77957821775
SN - 9781617387548
T3 - Materials Research Society Symposium Proceedings
SP - 53
EP - 64
BT - High-k Dielectrics on Semiconductors with High Carrier Mobility
T2 - 2009 MRS Fall Meeting
Y2 - 30 November 2009 through 4 December 2009
ER -