Relationships between interface structures and electrical properties in the high-κ/III-V system

Tetsuji Yasuda; Noriyuki Miyata; Yuji Urabe; Hiroyuki Ishii; Taro Itatani; Hideki Takagi; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Akihiro Ohtake; Masafumi Yokoyama; Takuya Hoshii; Takashi Haimoto; Momoko Deura; Masakazu Sugiyama; Mitsuru Takenaka; Shinichi Takagi

Relationships between interface structures and electrical properties in the high-κ/III-V system

Tetsuji Yasuda, Noriyuki Miyata, Yuji Urabe, Hiroyuki Ishii, Taro Itatani, Hideki Takagi, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Akihiro Ohtake, Masafumi Yokoyama, Takuya Hoshii, Takashi Haimoto, Momoko Deura, Masakazu Sugiyama, Mitsuru Takenaka, Shinichi Takagi

金属材料研究所・材料設計研究部

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

Integration of III-V channel MISFETs on the Si platform expectedly improves the performance and reduces the power consumption of CMOS devices with sub-10 nm gate lengths. Issues relating to the dielectrics/III-V interfaces are explored in this paper. A wide variety of interface structures were prepared by employing MOCVD-grown epitaxial wafers, surface reconstruction control in MBE, wet/dry surface pretreatments, and deposition of dielectrics (Al ₂O₃, HfO₂) by ALD or electron-beam evaporation. Relationships between the structures of the interfaces and the MIS properties are discussed, with particular attention to the effects of the cation composition (Al, Ga, In) in the semiconductor bulk and at the interface, anion control at the interface (sulfidation, nitridation), and the surface orientation [(100) versus (111)]. Recent developments in III-V-on-insulator wafer technology are also reported.

本文言語	English
ホスト出版物のタイトル	High-k Dielectrics on Semiconductors with High Carrier Mobility
ページ	53-64
ページ数	12
出版ステータス	Published - 2010 10 15
イベント	2009 MRS Fall Meeting - Boston, MA, United States 継続期間: 2009 11 30 → 2009 12 4

出版物シリーズ

名前	Materials Research Society Symposium Proceedings
巻	1194
ISSN（印刷版）	0272-9172

Other

Other	2009 MRS Fall Meeting
Country	United States
City	Boston, MA
Period	09/11/30 → 09/12/4

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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引用スタイル

Yasuda, T., Miyata, N., Urabe, Y., Ishii, H., Itatani, T., Takagi, H., Yamada, H., Fukuhara, N., Hata, M., Ohtake, A., Yokoyama, M., Hoshii, T., Haimoto, T., Deura, M., Sugiyama, M., Takenaka, M., & Takagi, S. (2010). Relationships between interface structures and electrical properties in the high-κ/III-V system. In High-k Dielectrics on Semiconductors with High Carrier Mobility (pp. 53-64). (Materials Research Society Symposium Proceedings; Vol. 1194).

Relationships between interface structures and electrical properties in the high-κ/III-V system. / Yasuda, Tetsuji; Miyata, Noriyuki; Urabe, Yuji; Ishii, Hiroyuki; Itatani, Taro; Takagi, Hideki; Yamada, Hisashi; Fukuhara, Noboru; Hata, Masahiko; Ohtake, Akihiro; Yokoyama, Masafumi; Hoshii, Takuya; Haimoto, Takashi; Deura, Momoko; Sugiyama, Masakazu; Takenaka, Mitsuru; Takagi, Shinichi.

High-k Dielectrics on Semiconductors with High Carrier Mobility. 2010. p. 53-64 (Materials Research Society Symposium Proceedings; Vol. 1194).

研究成果: Conference contribution

Yasuda, T, Miyata, N, Urabe, Y, Ishii, H, Itatani, T, Takagi, H, Yamada, H, Fukuhara, N, Hata, M, Ohtake, A, Yokoyama, M, Hoshii, T, Haimoto, T, Deura, M, Sugiyama, M, Takenaka, M & Takagi, S 2010, Relationships between interface structures and electrical properties in the high-κ/III-V system. in High-k Dielectrics on Semiconductors with High Carrier Mobility. Materials Research Society Symposium Proceedings, vol. 1194, pp. 53-64, 2009 MRS Fall Meeting, Boston, MA, United States, 09/11/30.

Yasuda, Tetsuji ; Miyata, Noriyuki ; Urabe, Yuji ; Ishii, Hiroyuki ; Itatani, Taro ; Takagi, Hideki ; Yamada, Hisashi ; Fukuhara, Noboru ; Hata, Masahiko ; Ohtake, Akihiro ; Yokoyama, Masafumi ; Hoshii, Takuya ; Haimoto, Takashi ; Deura, Momoko ; Sugiyama, Masakazu ; Takenaka, Mitsuru ; Takagi, Shinichi. / Relationships between interface structures and electrical properties in the high-κ/III-V system. High-k Dielectrics on Semiconductors with High Carrier Mobility. 2010. pp. 53-64 (Materials Research Society Symposium Proceedings).

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abstract = "Integration of III-V channel MISFETs on the Si platform expectedly improves the performance and reduces the power consumption of CMOS devices with sub-10 nm gate lengths. Issues relating to the dielectrics/III-V interfaces are explored in this paper. A wide variety of interface structures were prepared by employing MOCVD-grown epitaxial wafers, surface reconstruction control in MBE, wet/dry surface pretreatments, and deposition of dielectrics (Al 2O3, HfO2) by ALD or electron-beam evaporation. Relationships between the structures of the interfaces and the MIS properties are discussed, with particular attention to the effects of the cation composition (Al, Ga, In) in the semiconductor bulk and at the interface, anion control at the interface (sulfidation, nitridation), and the surface orientation [(100) versus (111)]. Recent developments in III-V-on-insulator wafer technology are also reported.",

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AU - Takagi, Hideki

AU - Yamada, Hisashi

AU - Fukuhara, Noboru

AU - Hata, Masahiko

AU - Ohtake, Akihiro

AU - Yokoyama, Masafumi

AU - Hoshii, Takuya

AU - Haimoto, Takashi

AU - Deura, Momoko

AU - Sugiyama, Masakazu

AU - Takenaka, Mitsuru

AU - Takagi, Shinichi

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