Relation between critical current of domain wall motion and wire dimension in perpendicularly magnetized Co/Ni nanowires

S. Fukami, Y. Nakatani, T. Suzuki, K. Nagahara, N. Ohshima, N. Ishiwata

研究成果: Article査読

37 被引用数 (Scopus)

抄録

We investigated the relation between critical current of domain wall motion and wire dimension by using perpendicularly magnetized Co/Ni nanowires with different widths and thicknesses. The critical current, Ic, became less than 0.2 mA when w<100 nm, suggesting that magnetic random access memory with domain wall motion can replace conventional embedded memories. In addition, in agreement with theory, the critical current density, jc, decreased as wire width decreased and became much less than 5× 10 7 A/ cm2 when w<100 nm. We also performed a micromagnetic simulation and obtained good agreement between the experiment and simulation, although a few discrepancies were found.

本文言語English
論文番号232504
ジャーナルApplied Physics Letters
95
23
DOI
出版ステータスPublished - 2009
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Relation between critical current of domain wall motion and wire dimension in perpendicularly magnetized Co/Ni nanowires」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル