Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by N H3 -source molecular beam epitaxy

T. Koyama, M. Sugawara, T. Hoshi, A. Uedono, J. F. Kaeding, R. Sharma, S. Nakamura, S. F. Chichibu

研究成果: Article査読

58 被引用数 (Scopus)

抄録

Intensity ratios of characteristic deep cathodoluminescence (CL) bands at 4.6, 3.8, and 3.1 eV to the near-band-edge emissions at 11 K of AlN epilayers grown by N H3 -source molecular beam epitaxy were correlated with the change in the S parameter of positron annihilation measurement, which represents the concentration or size of Al vacancies (VAl). Since the relative intensities of 3.1 and 3.8 eV bands increased remarkably with lowering supply ratio of N H3 to Al (V/III ratio) and growth temperature (Tg), they were assigned to originate from VAl -O complexes. The VAl concentration could be decreased by adjusting V/III ratio and Tg, resulting in observation of fine excitonic features in the CL spectra. From the energy separation between the ground and first excited states, the binding energy of A exciton was determined to be 48 meV.

本文言語English
論文番号241914
ジャーナルApplied Physics Letters
90
24
DOI
出版ステータスPublished - 2007

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by N H3 -source molecular beam epitaxy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル