Bi desorption from a single-domain Si(001)2×1-Bi surface was investigated using grazing-incidence reflection high energy electron diffraction and Auger electron spectroscopy (RHEED-AES). This RHEED-AES method enabled the simultaneous measurement of both the surface structure and the surface coverage, θBi, during Bi desorption. As θBi decreased from 1 ML to 0 ML, the RHEED intensity profiles indicated several structural changes which were in accordance with previously reported structural changes. Despite these structural changes, The Bi desorption follows first-order reaction kinetics over the entire coverage range of 1 ML ≥ θBi with an activation energy of 1.54 eV.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 1996 12 1|
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