Reductive solid phase epitaxy of layered Y2O2Bi with Bi2- square net from (Y, Bi) powders and Y2O3 amorphous thin film

Ryosuke Sei, Tomoteru Fukumura, Tetsuya Hasegawa

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Ingenious solid phase epitaxy of ThCr2Si2-type Y 2O2Bi thin film with a Bi2- square net was developed. A Y2O3 amorphous thin film with Y and Bi powders was heated in two steps under reductive atmosphere on a nonoxide lattice-matched CaF2 substrate. This procedure was indispensable for the epitaxial growth of Y2O2Bi, circumventing the formation of the C-rare earth type (Y,Bi)2O3 with Bi 3+. Highly oxidizable Y metal was a key to accomplish the unusual reductive state of Bi2-. The lattice-matched CaF2 substrate possessing a similar structure to the Y2O2 2+ unit in Y2O2Bi promoted the spontaneous c-axis orientation of the thin film.

本文言語English
ページ(範囲)4227-4229
ページ数3
ジャーナルCrystal Growth and Design
14
9
DOI
出版ステータスPublished - 2014 9 3
外部発表はい

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

フィンガープリント 「Reductive solid phase epitaxy of layered Y<sub>2</sub>O<sub>2</sub>Bi with Bi<sup>2-</sup> square net from (Y, Bi) powders and Y<sub>2</sub>O<sub>3</sub> amorphous thin film」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル