We have developed a technique for improving X-ray irradiation stability of silicon nitride (SiN) X-ray mask membrane using H+implantation. This technique can realize the reduction of X-ray irradiation-induced patterndisplacement to less than 20 nm after X-ray absorption with a dose of 30 MJ/cm3by optimizing the implantationdose to 4 x 1015/cm2at 150 keV. It is found that the mechanism of the reduction of the displacement is that thestress change after X-ray absorption in the implanted layer (top to 1.1 μl in depth) of SiN film compensates thestress change in the unimplanted layer (l.l to 2.0 μn (bottom) in depth).
ASJC Scopus subject areas
- Physics and Astronomy(all)