Reduction of x-ray irradiation-induced pattern displacement of sin membranes using H+ion implantation technique

Kinya Ashikaga, Shinji Tsuboi, Yoshio Yamashita, Tsuneaki Ohta, Syuichi Noda, Masanori Kasai, Hiroshi Hoga

研究成果: Article査読

抄録

We have developed a technique for improving X-ray irradiation stability of silicon nitride (SiN) X-ray mask membrane using H+implantation. This technique can realize the reduction of X-ray irradiation-induced patterndisplacement to less than 20 nm after X-ray absorption with a dose of 30 MJ/cm3by optimizing the implantationdose to 4 x 1015/cm2at 150 keV. It is found that the mechanism of the reduction of the displacement is that thestress change after X-ray absorption in the implanted layer (top to 1.1 μl in depth) of SiN film compensates thestress change in the unimplanted layer (l.l to 2.0 μn (bottom) in depth).

本文言語English
ページ(範囲)6655-6657
ページ数3
ジャーナルJapanese journal of applied physics
34
12
DOI
出版ステータスPublished - 1995 12

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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