Reduction of ultraviolet-radiation damage in SiO2 using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes

Mitsuru Okigawa, Yasushi Ishikawa, Seiji Samukawa

研究成果: Article査読

36 被引用数 (Scopus)

抄録

The plasma-induced electric current in SiO2 was measured to investigate the influence of vacuum-ultra/violet (VUV) radiation dark current in He plasma. Dark current in CCD image sensors was caused by VUV light emitted by plasmas. Two types of devices were used to perform time-resolved-measurement experiments in pulse-time-modulated He plasma (He-TM plasma). The results show that the TM plasma does not reduce the ion-induced current, but completely reduces the photoinduced current in SiO2.

本文言語English
ページ(範囲)2448-2454
ページ数7
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
21
6
出版ステータスPublished - 2003 11月

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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