The plasma-induced electric current in SiO2 was measured to investigate the influence of vacuum-ultra/violet (VUV) radiation dark current in He plasma. Dark current in CCD image sensors was caused by VUV light emitted by plasmas. Two types of devices were used to perform time-resolved-measurement experiments in pulse-time-modulated He plasma (He-TM plasma). The results show that the TM plasma does not reduce the ion-induced current, but completely reduces the photoinduced current in SiO2.
|ジャーナル||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版ステータス||Published - 2003 11月|
ASJC Scopus subject areas