TY - GEN
T1 - Reduction of ultra-violet-radiation induced damage and its time-resolved measurement using pulse-time-modulated plasma
AU - Okigawa, M.
AU - Ishikawa, Y.
AU - Kumagai, S.
AU - Samukawa, S.
N1 - Publisher Copyright:
© 2002 American Vacuum Soc.
PY - 2002
Y1 - 2002
N2 - Plasma-radiation-induced SiO2-damage in inductively coupled He, Ar, and O2 plasmas was investigated by measurements of electrical hole currents generated by the plasmas in SiO2 film using on-wafer monitoring, of electron densities in the plasmas, and of vacuum-ultraviolet (VUV) radiation intensity from the plasmas. The VUV intensities and the hole currents were reduced by pulse-time-modulated (TM) plasma, in spite of the electron densities still remained. This indicates that the TM plasma can reduce the electrical damages that are created by the hole current in the SiO2 of a MOS structure. In TM plasma, the VUV intensity dramatically decayed after the plasma-off time. On the other hand, the electron density gradually decreased with more than three times longer decay constant than the VUV intensity in the He TM plasma. These results show that lowering of electron temperature in the plasma during discharge-off period reduced the VUV intensity. In addition, it was found that the hole-current-decay curve consists of two components, which is also discussed. In charge-coupled-device (CCD) image sensors, an increase in a dark current of the CCD was suppressed by using the TM plasma.
AB - Plasma-radiation-induced SiO2-damage in inductively coupled He, Ar, and O2 plasmas was investigated by measurements of electrical hole currents generated by the plasmas in SiO2 film using on-wafer monitoring, of electron densities in the plasmas, and of vacuum-ultraviolet (VUV) radiation intensity from the plasmas. The VUV intensities and the hole currents were reduced by pulse-time-modulated (TM) plasma, in spite of the electron densities still remained. This indicates that the TM plasma can reduce the electrical damages that are created by the hole current in the SiO2 of a MOS structure. In TM plasma, the VUV intensity dramatically decayed after the plasma-off time. On the other hand, the electron density gradually decreased with more than three times longer decay constant than the VUV intensity in the He TM plasma. These results show that lowering of electron temperature in the plasma during discharge-off period reduced the VUV intensity. In addition, it was found that the hole-current-decay curve consists of two components, which is also discussed. In charge-coupled-device (CCD) image sensors, an increase in a dark current of the CCD was suppressed by using the TM plasma.
KW - Argon
KW - Charge carrier processes
KW - Charge coupled devices
KW - Density measurement
KW - Electrons
KW - Helium
KW - Plasma density
KW - Plasma measurements
KW - Plasma temperature
KW - Pulse measurements
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U2 - 10.1109/PPID.2002.1042624
DO - 10.1109/PPID.2002.1042624
M3 - Conference contribution
AN - SCOPUS:1642312115
T3 - International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings
SP - 122
EP - 125
BT - 2002 7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002
A2 - Gabriel, Calvin T.
A2 - Hook, Terence
A2 - Eriguchi, Koji
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002
Y2 - 5 June 2002 through 7 June 2002
ER -