Reduction of ultra-violet-radiation induced damage and its time-resolved measurement using pulse-time-modulated plasma

M. Okigawa, Y. Ishikawa, S. Kumagai, S. Samukawa

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Plasma-radiation-induced SiO2-damage in inductively coupled He, Ar, and O2 plasmas was investigated by measurements of electrical hole currents generated by the plasmas in SiO2 film using on-wafer monitoring, of electron densities in the plasmas, and of vacuum-ultraviolet (VUV) radiation intensity from the plasmas. The VUV intensities and the hole currents were reduced by pulse-time-modulated (TM) plasma, in spite of the electron densities still remained. This indicates that the TM plasma can reduce the electrical damages that are created by the hole current in the SiO2 of a MOS structure. In TM plasma, the VUV intensity dramatically decayed after the plasma-off time. On the other hand, the electron density gradually decreased with more than three times longer decay constant than the VUV intensity in the He TM plasma. These results show that lowering of electron temperature in the plasma during discharge-off period reduced the VUV intensity. In addition, it was found that the hole-current-decay curve consists of two components, which is also discussed. In charge-coupled-device (CCD) image sensors, an increase in a dark current of the CCD was suppressed by using the TM plasma.

本文言語English
ホスト出版物のタイトル2002 7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002
編集者Calvin T. Gabriel, Terence Hook, Koji Eriguchi
出版社Institute of Electrical and Electronics Engineers Inc.
ページ122-125
ページ数4
ISBN(電子版)0965157776
DOI
出版ステータスPublished - 2002
イベント7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002 - Maui, United States
継続期間: 2002 6月 52002 6月 7

出版物シリーズ

名前International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings
2002-January

Other

Other7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002
国/地域United States
CityMaui
Period02/6/502/6/7

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料
  • 材料化学
  • 凝縮系物理学

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