Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

Meng Fang Lin, Xu Gao, Nobuhiko Mitoma, Takio Kizu, Ou Yang Wei, Shinya Aikawa, Toshihide Nabatame, Kazuhito Tsukagoshi

研究成果: Article査読

9 被引用数 (Scopus)

抄録

The stable operation of transistors under a positive bias stress (PBS) is achieved using Hf incorporated into InOx-based thin films processed at relatively low temperatures (150 to 250 °C). The mobilities of the Hf-InOx thin-film transistors (TFTs) are higher than 8 cm2/Vs. The TFTs not only have negligible degradation in the mobility and a small shift in the threshold voltage under PBS for 60 h, but they are also thermally stable at 85 °C in air, without the need for a passivation layer. The Hf-InOx TFT can be stable even annealed at 150 °C for positive bias temperature stability (PBTS). A higher stability is achieved by annealing the TFTs at 250 °C, originating from a reduction in the trap density at the Hf-InOx/gate insulator interface. The knowledge obtained here will aid in the realization of stable TFTs processed at low temperatures.

本文言語English
論文番号017116
ジャーナルAIP Advances
5
1
DOI
出版ステータスPublished - 2015 1 1
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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