Reduction of electrical resistivity of Cu interconnects

Masanori Murakami, Miki Moriyama, Susumu Tsukimoto, Kazuhiro Ito, Takashi Onishi

    研究成果: Conference contribution

    抄録

    Although Cu was found to be attractive as interconnect materials for ultra-large scale integrated (ULSI) Si devices, the electrical resistance of Cu films was found to increase significantly when the film thickness was thinner than 70nm. In this talk we will first review our recent results on (1) determination of the primary factor to increase the electrical resistivity of nano-scale Cu films, (2) development of a fabrication technique for low resistance Cu films, and (3) formation of extremely thin diffusion barriers between Cu films and insulators by adding a small amount of a second element to Cu interconnects. Then, we will propose a new fabrication process of Cu innerconnects using a sputter-deposition and high temperature reflow technique.

    本文言語English
    ホスト出版物のタイトルElectronic, Magnetic and Photonic Materials Division Symposium
    ホスト出版物のサブタイトルAdvanced Metallizations and Interconnect Technologies 2007 - Proceedings of Symposium held during the 2007 TMS Annual Meeting
    ページ1-9
    ページ数9
    出版ステータスPublished - 2007 12月 1
    イベント136th TMS Annual Meeting, 2007 - Orlando, FL, United States
    継続期間: 2007 2月 252007 3月 1

    出版物シリーズ

    名前TMS Annual Meeting

    Other

    Other136th TMS Annual Meeting, 2007
    国/地域United States
    CityOrlando, FL
    Period07/2/2507/3/1

    ASJC Scopus subject areas

    • 凝縮系物理学
    • 材料力学
    • 金属および合金

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