Reduction of efficiency droop in semipolar (11-01) InGaN/GaN light emitting diodes grown on patterned silicon substrates

C. H. Chiu, D. W. Lin, C. C. Lin, Z. Y. Li, H. C. Kuo, T. C. Lu, S. C. Wang, W. T. Liao, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Sawaki

研究成果: Conference contribution

抜粋

The semi-polar InGaN-based LEDs exhibits low efficiency droop because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations.

元の言語English
ホスト出版物のタイトルCLEO
ホスト出版物のサブタイトルScience and Innovations, CLEO_SI 2011
出版物ステータスPublished - 2011 12 1
イベントCLEO: Science and Innovations, CLEO_SI 2011 - Baltimore, MD, United States
継続期間: 2011 5 12011 5 6

出版物シリーズ

名前Optics InfoBase Conference Papers
ISSN(電子版)2162-2701

Other

OtherCLEO: Science and Innovations, CLEO_SI 2011
United States
Baltimore, MD
期間11/5/111/5/6

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • これを引用

    Chiu, C. H., Lin, D. W., Lin, C. C., Li, Z. Y., Kuo, H. C., Lu, T. C., Wang, S. C., Liao, W. T., Tanikawa, T., Honda, Y., Yamaguchi, M., & Sawaki, N. (2011). Reduction of efficiency droop in semipolar (11-01) InGaN/GaN light emitting diodes grown on patterned silicon substrates. : CLEO: Science and Innovations, CLEO_SI 2011 (Optics InfoBase Conference Papers).